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PD - 97183
IRF6631
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l l l l l l l l l
RoHS compliant containing no lead or bromide Low Profile (<0.6 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET applications Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
VDSS Qg
tot
VGS Qgd
4.4nC
RDS(on) Qgs2
1.1nC
RDS(on) Qoss
7.3nC
30V max 20V max 6.0m@ 10V 8.3m@ 4.5V
Qrr
10nC
Vgs(th)
1.8V
12nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6631 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6631 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6631 has been optimized for parameters that are critical in synchronous buck including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
V DS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM E AS IAR
Parameter
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
e e f
h
VGS, Gate-to-Source Voltage (V)
30 20 13 10 57 100 13 10
A
mJ A
20
Typical RDS(on) (m)
12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 5 10 15 20 25 30 QG Total Gate Charge (nC) ID= 10A VDS= 24V VDS= 15V
ID = 13A 15 10 5 T J = 25C 0 3 4 5 6 7 8 9 10 T J = 125C
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.24mH, RG = 25, IAS = 10A.
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02/09/06
IRF6631
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 32 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 23 6.0 8.3 1.8 -5.2 --- --- --- --- --- 12 3.4 1.1 4.4 3.1 5.5 7.3 1.6 15 18 18 4.9 1450 310 170
Conditions
--- V VGS = 0V, ID = 250A --- mV/C Reference to 25C, ID = 1mA 7.8 m VGS = 10V, ID = 13A c VGS = 4.5V, ID = 10A c 10.8 VDS = VGS, ID = 25A 2.35 V --- mV/C 1.0 A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C 150 100 nA VGS = 20V VGS = -20V -100 --- S VDS = 15V, ID = 10A 18 --- --- --- --- --- --- 3.0 --- --- --- --- --- --- --- VDS = 15V VGS = 4.5V ID = 10A See Fig. 15 nC
nC
VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V c ID = 10A
ns
pF
Clamped Inductive Load See Fig. 16 & 17 VGS = 0V VDS = 15V = 1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 11 10 42 A 100 1.2 17 15 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 10A, VGS = 0V c TJ = 25C, IF = 10A di/dt = 500A/s c See Fig. 18
Notes:
Pulse width 400s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature.
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IRF6631
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
f
Parameter
Max.
2.2 1.4 42 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
100
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
g dg eg fg
Parameter
Typ.
--- 12.5 20 --- 1.4 0.017
Max.
58 --- --- 3.0 ---
Units
C/W
A
W/C
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 4 R5 R5 A 1 2 3 4 5 5 A
1
Ri (C/W)
1.6195 2.14056 22.2887 20.0457 11.9144
i (sec)
0.000126 0.001354 0.375850 7.41 99
0.1
Ci= i/Ri Ci= i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6631
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
10
1
60s PULSE WIDTH
0.1 2.5V 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Tj = 25C
1
2.5V
60s PULSE WIDTH
Tj = 150C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 10V 60s PULSE WIDTH 100 T J = 150C 10 T J = 25C T J = -40C
Fig 5. Typical Output Characteristics
2.0 ID = 13A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
V GS = 10V V GS = 4.5V 1.5
1.0
1
0.1 1 2 3 4 5
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
Fig 7. Normalized On-Resistance vs. Temperature
50
T = 25C J
Typical RDS(on) ( m)
C oss = C ds + C gd
40
C, Capacitance(pF)
Ciss 1000
30
Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
20
Coss Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100
10
0 0 20 40 60 80 100 120
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage
ID, Drain Current (A)
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IRF6631
1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150C T J = 25C T J = -40C
ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A)
100
100sec 1msec
10
10
10msec
1 VGS = 0V 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
1
T A = 25C T J = 150C Single Pulse 0.0 0.1 1.0 10 100
0.1 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60 50
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig 11. Maximum Safe Operating Area
2.5
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (C)
2.0
ID = 50A 1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP 3.1A 4.5A BOTTOM 10A
50 40 30 20 10 0 25 50 75
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6631
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
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IRF6631
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D G D S
D
D
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IRF6631
DirectFET Outline Dimension, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.52 E 0.48 0.82 F 0.78 0.92 G 0.88 0.82 H 0.78 N/A J N/A 0.97 K 0.93 2.10 L 2.00 0.59 M 0.48 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN 0.187 0.146 0.108 0.014 0.019 0.031 0.035 0.031 N/A 0.037 0.079 0.019 0.001 0.003 MAX 0.191 0.156 0.112 0.018 0.020 0.032 0.036 0.032 N/A 0.038 0.083 0.023 0.003 0.007
DirectFET Part Marking
8
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IRF6631
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6631). For 1000 parts on 7" reel, order IRF6631TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL METRIC IMPERIAL METRIC MAX CODE MIN MIN MAX MIN MIN MAX MAX N.C A 6.9 12.992 330.0 177.77 N.C N.C N.C B 0.75 0.795 N.C 20.2 19.06 N.C N.C N.C C 0.53 0.504 0.50 12.8 13.5 0.520 12.8 13.2 D 0.059 0.059 N.C 1.5 1.5 N.C N.C N.C E 2.31 3.937 N.C 100.0 58.72 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.47 0.488 N.C 12.4 11.9 0.567 12.01 14.4 H 0.47 0.469 N.C 11.9 11.9 0.606 12.01 15.4
Loaded Tape Feed Direction
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 11.90 0.484 12.30 0.215 5.45 0.219 5.55 0.158 0.165 4.00 4.20 0.197 0.205 5.00 5.20 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/06
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